Publications

Publications

2016

Workshop On Approximate Computing (WAPCO)

 

J. App. Phys. 120 024503

 

App. Phys. Lett. 108 152102

 

 

2015

2014

  • “Quantum dot ternary-valued full-adder: Logic synthesis by a multiobjective design optimization based on a genetic algorithm”
  • M.V. Klymenko, F. Remacle
    Journal of Applied Physics, October 2014

  • “Edge-states at the onset of a silicon trigate nanowire FET”
  • B. Voisin, V.-H. Nguyen, J. Renard, X. Jehl, S.Barraud, F. Triozon, M. Vinet, I. Duchemin, Y.-M. Niquet, S. de Franceschi and M. Sanquer
    Silicon Nanoworkshop, Honolulu, HI, USA, 8-9 June 2014

  • “Back-gating effects on radio-frequency reflectometry-based characterization of nanoscale Si single-electron transistors”
  • A. O. Orlov, P. Fay, G. L. Snider, X. Jehl, S. Barraud and M. Sanquer
    Silicon Nanoworkshop, Honolulu, HI, USA, 8-9 June 2014

  • “Charge detection in ultrasmall Si single-hole transistors using dual channel standing –wave radio frequency reflectometry”
  • A. O. Orlov, P. Fay, G. L. Snider, X. Jehl, S. Barraud and M. Sanquer
    ICSNN2014 – International conference on Superlattices, Nanostructures and Nanodevices, Savannah, USA, 3-8 August 2014

  • “Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry”
  • A. O. Orlov, P. Fay, G. L. Snider, X. Jehl, S. Barraud and M. Sanquer
    72nd Device Research Conference, UC Santa-Barbara, CA, USA, 22-25 June 2014

  • “Dual channel radio frequency reflectometry technique for charge identification in single electron transistors”
  • A. O. Orlov, P. Fay, G. L. Snider, X. Jehl and M. Sanquer
    14th IEEE International Conference on Nanotechnology, Toronto, ON, Canada, 18-22 August 2014

  • “Fabrication and Characterization of Silicon Nanowire Single Electron and Hole Transistors Operating at 350K with Current Output Amplified up to the Milliampere range”
  • R. Laviéville, S.Barraud, A.Corna, X.Jehl, M.Sanquer and M. Vinet.
    EUROSOI Conf (submitted)

  • “Probing the limits of gate-based charge sensing”
  • M. F. Gonzalez-Zalba, S. Barruad, A. J. Ferguson and A. C. Betz
    CMD25-JMC14 – Condensed Matter, Paris, France, 24-29 August 2014

  • “Probing the limits of gate-based charge sensing”
  • M. F. Gonzalez-Zalba, S. Barruad, A. J. Ferguson and A. C. Betz
    Silicon Quantum Electronics Workshop 2014, Albuquerque, New Mexico, USA, 18-19 August 2014

  • “An exchange-coupled molecule in silicon”
  • M. F. Gonzalez-Zalba, A. Saraiva, M. J. Calderon, D. Heiss, B. Koiller and A. J. Ferguson
    International Conference on the Physics of Semiconductors 2014, Austin, Texas, USA, 10-15 August 2014

  • “The Sisyphus mechanism at the zero-dimensional limit”
  • M. F. Gonzalez-Zalba, S. Barruad and A. C. Betz
    International Conference on the Physics of Semiconductors 2014, Austin, Texas, USA, 10-15 August 2014

  • “Probing the limits of gate-based charge sensing”
  • M. F. Gonzalez-Zalba, S. Barruad, A. J. Ferguson and A. C. Betz
    International Conference on the Physics of Semiconductors 2014, Austin, Texas, USA, 10-15 August 2014

  • “High sensitivity charge readout of few electron quantum dots in silicon”
  • M. F. Gonzalez-Zalba, S. Barruad, A. J. Ferguson and A. C. Betz
    International conference on Quantum Dots 2014, Pisa, Italy, 11-16 May 2014

  • “An exchange-coupled molecule in silicon”
  • M. F. Gonzalez-Zalba, A. Saraiva, M. J. Calderon, D. Heiss, B. Koiller and A. J. Ferguson
    APS March meeting 2014, Denver, Colorado, USA, 3-7 March 2014

  • “Thermionic charge transport in CMOS nanotransistors”
  • A. C. Betz, S. Barraud, Q. Wilmart, B. Placais, X. Jehl, M. Sanquer and M. F. Gonzalez-Zalba
    APS March meeting 2014, Denver, Colorado, USA, 3-7 March 2014

  • “Spin gated transistors for reprogrammable logic”
  • M. F. Gonzalez-Zalba, C. Ciccarelli, L. Zarbo, R. Campion, B. Gallagher, T. Jungwirth, A. J. Ferguson and J. Wunderlich
    APS March meeting 2014, Denver, Colorado, USA, 3-7 March 2014

  • “Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor”
  • B. Voisin, V.-H. Nguyen, J. Renard, X. Jehl, S. Barraud, F. Triozon, M. Vinet, Y. Duchemin, Y.-M. Niquet, S. De Franceschi and M. Sanquer
    Nanoletters March 2014

  • “Electronic states and wavefunctions of diatomic donor molecular ions in silicon: multi-valley envelope function theory”
  • M.V. Klymenko, F. Remacle
    Journal of Physics: Condensed Matter, January 2014

  • “Ambipolar quantum dots in intrinsic silicon”
  • A. C. Betz, M. F. Gonzalez-Zalba, G. Podd and A. J. Ferguson
    Appl. Phys. Lett. (just accepted)

  • “A high-sensitivity gate-based charge sensor in silicon”
  • M. F. Gonzalez-Zalba, A. J. Ferguson, S. Barraud and A. C. Betz
    ArXiv, 1405.2755

  • “High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors”
  • A. C. Betz, S. Barraud, Q. Wilmart, B. Placais, X. Jehl, M. Sanquer and M. F. Gonzalez-Zalba
    Appl. Phys. Lett. 104, 4, 043106

  • “An Exchange-Coupled Donor Molecule in Silicon”
  • M. F. Gonzalez-Zalba, A. Saraiva, D. Heiss, M. J. Calderon, B. Koiller and A. J. Ferguson
    Nano Letters (just accepted)

  • “Evidence of magnetic field quenching in doped silicon quantum dots”
  • M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella, D. A. Williams and T. Ferrus
    Cur. Appl. Phys. 14, 1, S115

  • “GHz photon-activated hopping between localized states in a silicon quantum dot”
  • T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda and D. A. Williams
    New J. Phys. 16, 1, 013016

  • “Charge pumping through a single donor atom”
  • G. C. Tettamanzi, R. Wacquez and S. Rogge
    New J Phys 16, 063036

  • “Spatially resolving valley quantum interference of a donor in silicon”
  • J. Salfi et al.
    Nat Mater 13, 605–610

  • “An Accurate Single-Electron Pump Based on a Highly Tunable Silicon Quantum Dot”
  • A. Rossi et al.
    Nano Lett 14, 3405–3411

  • “Radio-frequency dispersive detection of donor atoms in a field-effect transistor”
  • J. Verduijn, M. Vinet and S. Rogge
    Appl. Phys. Lett. 104, 102107

  • “Probing the spin states of a single acceptor atom”
  • J. van der Heijden et al.
    Nano Lett 14, 1492−1496

2013

  • “A hybrid double-dot in silicon”
  • M. F. Gonzalez-Zalba, D. Heiss and A. J. Ferguson
    AIP Conference Proceedings 1566, 395

  • “Quantum computing: Atomic clocks in the solid state”
  • S. Rogge and M. J. Sellars
    Nature Nanotech 8, 544–545

  • “Transport through a single donor in p-type silicon”
  • J. A. Miwa, J. A. Mol, J. Salfi, S. Rogge and M. Y. Simmons
    Appl. Phys. Lett. 103, 043106–043106–4

  • “Silicon quantum electronics”
  • S. Rogge et al.
    Rev Mod Phys 85, 961–1019

  • “Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants”
  • J. A. Mol, J. Salfi, J. A. Miwa, M. Y. Simmons and S. Rogge
    87, 245417

  • “Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system”
  • R. R. Agundez, J. Verduijn, S. Rogge and M. Blaauboer
    87, 235407

  • “Wave Function Control over a Single Donor Atom”
  • J. Verduijn, G. C. Tettamanzi and S. Rogge
    Nano Lett 130326143745002

  • “Non-local coupling of two donor-bound electrons”
  • J. Verduijn, R. R. Agundez, M. Blaauboer and S. Rogge
    New J Phys 15, 033020

  • in “SINGLE-ATOM NANOELECTRONICS” (E. Prati and T. Shinada)
  • J.A. Mol, and S. Rogge
    329–343

  • in “CMOS Nanoelectronics: Innovative Devices, Architectures, And Applications” (N. Collaert)
  • G. Lansbergen et al.
    399-412

  • “Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade” (vol 107, 136602, 2011)
  • G. P. Lansbergen et al.
    Phys. Rev. Lett. 110

  • in “CMOS Nanoelectronics: Innovative Devices, Architectures, And Applications” (N. Collaert)
  • G. C. Tettamanzi, A. Paul, S. Lee, G. Klimeck and S. Rogge
    361-398

  • “Optical addressing of an individual erbium ion in silicon”
  • C. Yin et al.
    Nature 497, 91–94

  • in “SINGLE-ATOM NANOELECTRONICS” (E. Prati and T. Shinada)
  • J. Verduijn, G. C. Tettamanzi and S. Rogge
    211-230

  • “Hybrid metal-semiconductor electron pump for quantum metrology”
  • X. Jehl, B. Voisin, T. Charron, P. Clapera, S. Ray, B. Roche,M. Sanquer, S. Djordjevic, L. Devoille, R. Wacquez and M. Vinet
    Phys. Rev. X 3, 021012

  • “Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry”
  • E. Dupont-Ferrier et al.
    Phys. Rev. Lett. 110, 136802

  • “A two-atom electron pump”
  • B. Roche, R.-P. Riwar, B. Voisin, E. Dupont-Ferrier, R. Wacquez, M. Vinet, M. Sanquer, J. Splettstoesser and X. Jehl
    Nature Communications 4, 1581

  • “Optical addressing of an individual erbium ion in silicon”
  • Yin, C. et al.
    Nature 497, 91–94

  • “Function Control over a Single Donor Atom”
  • Verduijn, J., Tettamanzi, G. C. and Rogge, S.
    Wave Nano Lett 130326143745002

  • “Non-local coupling of two donor-bound electrons”
  • Verduijn, J., Agundez, R. R., Blaauboer, M. and Rogge, S.
    New J Phys 15, 033020

  • “Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade”
  • Lansbergen, G. P. et al.
    Phys. Rev. Lett. 110

2012

2011

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