Commissariat à l'énergie atomique et aux energies alternatives (CEA)

The CEA is the French Alternative Energies and Atomic Energy Commission (Commissariat à l'énergie atomique et aux énergies alternatives). It is a public body established in October 1945 by General de Gaulle. A leader in research, development and innovation, the mission statement has two main objectives: to become the leading technological research organization in Europe and to ensure that the nuclear deterrent remains effective in the future.

CEA-INAC-SPSMS-LaTEQS research group: laboratory for quantum electronic transport & superconductivity

The LaTEQS was established in 1996 as a part of the Institute for Nanosciences and Cryogeny (INAC), a joint research unit of the CEA with the University Joseph Fourier (Grenoble). The research activity embraces various aspects of mesoscopic quantum transport in nanostructures and low-dimensional systems: silicon nano-MOSFETs, self-assembled semiconductor nanostructures, carbon nanotubes, superconducting thin films, hybrid systems combining superconductors, normal conductors, and ferromagnets. In these systems we study the physics of individual confined electrons, as well as quantum phenomena resulting from strong electron-electron correlations (e.g. due to superconductivity, Coulomb interaction, Kondo effect, etc.). Our experimental tools range from low-noise electrical measurements, to current noise detection, specific-heat measurements, scanning-electron microscopy, time-resolved electrical measurements involving high-frequency signals, mostly at low temperature.

CEA-LETI research group

LETI, part of the CEA (French Atomic Energy Agency) is a research institute (on materials, processes and technologies) whose mission is to develop innovative solutions which lead to industrial transfers or start-up creation, and meanwhile to explore prospective fields in collaboration with academia. CEA-LETI has a strong experience in microelectronics, and especially in advanced CMOS technologies. Its activities cover the study of innovative substrates and devices for sub 22nm nodes. It has fabricated aggressive lengths MOS transistors on ultrathin SOI (Si thickness down to 2.5nm), strained-Silicon on Insulator (sSOI), SiGe-On-Insulator (SGOI) and GeOI substrates. CAE-LETI is focused on alternative solutions for CMOS down scaling (high-k dielectrics, metal gates, Raised Source/Drain, Metallic S/D…) and also on innovative CMOS integration schemes like nanowire transistors, multi-channel transistors and 3D integration of Ge on Si CMOS.

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